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Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) Features * High collector-emitter voltage (Base open) VCEO * Large collector power dissipation PC * Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 4.50.1 1.60.2 1.50.1 4.0+0.25 -0.20 2.50.1 3 0.40.04 0.40.08 1.50.1 3 1.0+0.1 -0.2 1 3 2 0.50.08 Absolute Maximum Ratings Ta = 25C 3.00.15 45 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 120 120 5 1 0.5 1 150 -55 to +150 Unit V V V A A W C C 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: V Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion. Electrical Characteristics Ta = 25C 3C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio *1 Symbol VCEO VEBO hFE1 *2 Conditions IC = 100 A, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 150 mA VCE = 5 V, IC = 500 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 120 5 130 50 Typ Max Unit V V 330 hFE2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob 0.2 0.85 120 0.6 1.20 20 V V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 R 130 to 220 S 185 to 330 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJC00202DED 0.4 max. 2.60.1 1 2SD0968A PC Ta 1.4 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness IC VCE IB = 20 mA 18 mA 16 mA 14 mA Ta = 25C 12 mA 10 mA 8 mA 6 mA 4 mA 0.6 1.2 IC I B VCE = 10 V Ta = 25C 1.0 Collector power dissipation PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 Collector current IC (A) 0.8 Collector current IC (A) 0.8 0.6 0.4 2 mA 0.4 0.2 0.2 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 5 10 15 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 VBE(sat) IC 102 hFE IC 300 VCE = 10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 Forward current transfer ratio hFE 250 Ta = 75C 200 25C -25C 1 Ta = 75C 10 -1 25C -25C 10 25C 1 Ta = -25C 75C 10 -1 150 100 10 -2 50 10 -3 10 -2 1 10 100 1 000 1 10 100 1 000 0 1 10 100 1 000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 200 VCB = 10 V Ta = 25C Cob VCB 50 IE = 0 f = 1 MHz Ta = 25C Transition frequency fT (MHz) 160 40 120 30 80 20 40 10 0 -1 -10 -100 0 1 10 100 Emitter current IE (mA) Collector-base voltage VCB (V) 2 SJC00202DED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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